Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon

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Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon

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An InGaAs/GaAs quantum well laser using p-type δ-doping selectively in the barriers has been demonstrated to reduce the threshold current and carrier lifetime. A δ-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlAs growth by metal organic chemical vapour deposition (MOCVD). A threshold current density as low as 160 A/cm2, (54 A/cm2/well) has been obtained for three quantum well stripe lasers grown at 1.7 × 1018 cm–3 carbon doping.

Inspec keywords: doping profiles; optical fabrication; current density; carrier lifetime; III-V semiconductors; indium compounds; quantum well lasers; vapour phase epitaxial growth; gallium arsenide; semiconductor doping; carbon

Other keywords: C auto-doping; quantum well lasers; InGaAs/GaAs quantum well lasers; threshold current reduction; metal organic CVD; threshold current density; InGaAs-GaAs; MOCVD; semiconductor lasers; p-type δ-doped QW lasers; AlAs:C; chemical vapour deposition; stripe lasers; δ-doping technique; carrier lifetime reduction

Subjects: Semiconductor doping; Design of specific laser systems; Epitaxial growth; Chemical vapour deposition; Semiconductor lasers; Doping and implantation of impurities; Optical fabrication, surface grinding; Lasing action in semiconductors

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