High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes
A novel P+polysilicon/N-6H-SiC heterojunction diode is reported which combines the advantages of both Schottky barrier diodes and pn junction diodes. The unterminated heterojunction diodes have excellent rectification characteristics and a high breakdown voltage of 220 V. The forward voltage drop measured at 100 A/cm2 is 2.7 V, close to the calculated value of 2.4 V. The suitability of this device for high speed switching applications was experimentally confirmed using reverse recovery measurements.