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High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

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A novel P+polysilicon/N-6H-SiC heterojunction diode is reported which combines the advantages of both Schottky barrier diodes and pn junction diodes. The unterminated heterojunction diodes have excellent rectification characteristics and a high breakdown voltage of 220 V. The forward voltage drop measured at 100 A/cm2 is 2.7 V, close to the calculated value of 2.4 V. The suitability of this device for high speed switching applications was experimentally confirmed using reverse recovery measurements.

References

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      • Bhatnagar, M., Nakanishi, H., Bothra, S., McLarty, P.K., Baliga, B.J.: `Edge terminations for SiC high voltage Schottky rectifiers', 5th Int. Symp. on Power Semiconductor Devices and IC's, 1993, 5p. 89–94, .
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      • Edmond, J.A., Waltz, D.G., Brueckner, S., Kong, H.S., Palmour, J.W., Carter, C.H.: `High temperature rectifiers in 6H-silicon carbide', Proc. 1st Int. High Temperature Electron. Conf., 1991, p. 499–505.
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