Improvement of fT by dipole doping at the collector heterojunction in InP double HBTs

Improvement of fT by dipole doping at the collector heterojunction in InP double HBTs

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The authors show clearly how dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor improves device performance. Specifically, both fT and fMAX are increased and the DC current-blocking is reduced. Also the DC switching characteristics, seen in devices with abrupt undoped InGaAs/InP collector heterojunctions, can almost be eliminated by using the dipole doping at that interface.


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