Microwave performance of 0.25 µm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Microwave performance of 0.25 µm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
- Author(s): Q. Chen ; R. Gaska ; M. Asif Khan ; M.S. Shur ; A. Ping ; I. Adesida ; J. Burm ; W.J. Schaff ; L.F. Eastman
- DOI: 10.1049/el:19970403
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- Author(s): Q. Chen 1 ; R. Gaska 1 ; M. Asif Khan 1 ; M.S. Shur 2 ; A. Ping 3 ; I. Adesida 3 ; J. Burm 4 ; W.J. Schaff 4 ; L.F. Eastman 4
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View affiliations
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Affiliations:
1: APA Optics, Inc., Blaine, USA
2: Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, USA
3: Microelectronics Laboratory, University of Illinois, Urbana, USA
4: School of Electrical Engineering, Philips Hall, Ithaca, USA
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Affiliations:
1: APA Optics, Inc., Blaine, USA
- Source:
Volume 33, Issue 7,
27 March 1997,
p.
637 – 639
DOI: 10.1049/el:19970403 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors report the DC and microwave performance of a 0.25 µm gate doped channel Al0.14Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.
Inspec keywords: gallium compounds; microwave field effect transistors; III-V semiconductors; Fermi level; aluminium compounds; doping profiles
Other keywords:
Subjects: Semiconductor doping; Solid-state microwave circuits and devices; Other field effect devices
References
-
-
1)
- M.A. Khan , Q. Chen , M.S. Shur , B.T. Dermott , J.A. Higgins , J. Burm , W. Schaff , L.F. Eastman . Short channel GaN/AlGaN doped channel heterostructure field effect transistorswith 36.1 cutoff frequency. Electron. Lett. , 4
-
2)
- M.S. Shur , B. Gelmont , M. Asif Khan . High electron mobility in two-dimensional electrons gas in AlGaN/GaNheterostructures and in bulk GaN. J. Electron. Mater. , 5 , 777 - 785
-
3)
- S.N. Mohammad , Z.-F. Fan , A. Salvador , Ö. Aktas , A.E. Botchkarev , W. Kim , H. Morkoç . Photoluminescence characterization of the quantum well structure andinfluence of optical illumination on the electrical performanceof AlGaN/GaN modulation-doped field effect transistors. Appl. Phys. Lett. , 10
-
4)
- E. Martin , A. Botchkarev , A. Rockett , H. Morkoç . Valence-band discontinuities of wurtzite GaN, AlN and InN heterojunctionsmeasured by x-ray photoemission spectroscopy. Appl. Phys. Lett. , 18
-
5)
- W. Knap , S. Contreras , H. Alause , C. Skierbiszewski , J. Camassel , M. Dyakonov , J. Young , Q. Chen , M. Asif Khan , M.L. Sadowski , S. Huant , M. Shur . Cyclotron resonance and quantum Hall effect studies of two-dimensionalelectron gas confined at GaN-AlGaN interface. Appl. Phys. Lett.
-
6)
- M.A. Khan , Q. Chen , M.S. Shur , B.T. Dermott , J.A. Higgins , J. Burm , W. Schaff , L.F. Eastman . CW operation of short channel GaN/AlGaN doped channel heterostructurefield effect transistors at 10 GHz and 15 GHz. IEEE Electron Device Lett. , 12 , 584 - 585
-
7)
- U.V. Bhapkar , M.S. Shur . Velocity-field characteristics of 2-D and 3-D electron gases in GaN. J. Appl. Phys.
-
8)
- Y.-F. Wu , B.P. Keller , S. Keller , D. Kapolnek , P. Kozodoy , S.P. Denbaars , U.K. Mishra . Very high breakdown voltage and large transconductance realized on GaNheterojunction field effect transistors. Appl. Phys. Lett. , 10
-
9)
- M. Asif Khan , M.S. Shur , Q. Chen , J. Yang , R. Gaska , M. Blasingame , A. Ping , I. Idesida , V.P. Madangarli , T.S. Sudarshan . High pinch-off voltage AlGaN-GaN heterostructure field effect transistor. IEEE Electron Device Lett.
-
10)
- Y.-F. Wu , B.P. Keller , S. Keller , D. Kapolnek , S.P. Denbaars , U.K. Mishra . Measured microwave power performance of AlGaN/GaN MODFET. IEEE Electron Device Lett. , 9 , 455 - 457
-
11)
- M. Asif Khan , Q. Chen , M.S. Shur , B.T. Dermott , J.A. Higgins . Microwave operation of GaN/AlGaN doped channel heterostructure fieldeffect transistors. IEEE Electron Device Lett. , 7 , 325 - 327
-
12)
- F. Stern , S. Sarma . Electron energy levels in GaAs-Ga1-xAlxAs heterojunctions. Phys. Rev. , 2 , 840 - 848
-
1)