Self-aligned pseudomorphic HEMT with a low-temperature-grown GaAs gate insulator

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Self-aligned pseudomorphic HEMT with a low-temperature-grown GaAs gate insulator

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A new enhancement-mode GaAs pseudomorphic high-electron-mobility transistor (pHEMT) with a low-temperature-grown (LTG) GaAs gate insulator has been developed. The source and drain are doped by self-aligned implant and no gate recess is needed. The LTG-GaAs gate insulator drastically reduces the gate leakage current, allowing a maximum drain current of 390 mA/mm obtained at 3 V of forward gate bias. The maximum transconductance is 330 mS/mm and the cutoff frequency is 31 GHz for pHEMTs with a 0.5 µm gate length.

Inspec keywords: indium compounds; leakage currents; III-V semiconductors; high electron mobility transistors; aluminium compounds; ion implantation; gallium arsenide

Other keywords: cutoff frequency; maximum drain current; 31 GHz; gate leakage current; forward gate bias; transconductance; self-aligned pseudomorphic HEMT; low-temperature-grown gate insulator; 0.5 micron; 3 V; GaAs-AlAs-InGaAs; self-aligned implant

Subjects: Semiconductor doping; Other field effect devices

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