Sub-nanosecond access time 2 k sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Sub-nanosecond access time 2 k sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
- Author(s): A. Thiede ; E. Bushehri ; U. Nowotny ; M. Rieger-Motzer ; M. Sedler ; W. Bronner ; J. Hornung ; G. Kaufel ; B. Raynor ; J. Schneider
- DOI: 10.1049/el:19970278
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- Author(s): A. Thiede 1 ; E. Bushehri 2 ; U. Nowotny 1 ; M. Rieger-Motzer 1 ; M. Sedler 1 ; W. Bronner 1 ; J. Hornung 1 ; G. Kaufel 1 ; B. Raynor 1 ; J. Schneider 1
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View affiliations
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Affiliations:
1: Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany
2: Microelectronics Centre, Middlesex University, London, United Kingdom
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Affiliations:
1: Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany
- Source:
Volume 33, Issue 5,
27 February 1997,
p.
428 – 429
DOI: 10.1049/el:19970278 , Print ISSN 0013-5194, Online ISSN 1350-911X
The design and performance of a 2 kbit sine-cosine ROM lookup table in 0.3 µm gate length AlGaAs/GaAs/AlGaAs HEMT technology are presented. A maximum clock frequency of 1.3 GHz is achieved resulting in a sub-nanosecond access time. The power consumption at supply voltages of +1.8 and –2 V is ~2 W.
Inspec keywords: HEMT integrated circuits; table lookup; semiconductor quantum wells; III-V semiconductors; read-only storage; gallium arsenide; field effect memory circuits; aluminium compounds
Other keywords:
Subjects: Other field effect integrated circuits; Memory circuits; Semiconductor storage
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