Sub-nanosecond access time 2 k sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

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Sub-nanosecond access time 2 k sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

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The design and performance of a 2 kbit sine-cosine ROM lookup table in 0.3 µm gate length AlGaAs/GaAs/AlGaAs HEMT technology are presented. A maximum clock frequency of 1.3 GHz is achieved resulting in a sub-nanosecond access time. The power consumption at supply voltages of +1.8 and –2 V is ~2 W.

Inspec keywords: HEMT integrated circuits; table lookup; semiconductor quantum wells; III-V semiconductors; read-only storage; gallium arsenide; field effect memory circuits; aluminium compounds

Other keywords: AlGaAs-GaAs-AlGaAs; ROM lookup table; 1.8 V; 0.3 micron; 1.3 GHz; maximum clock frequency; quantum well HEMT technology; sine-cosine-ROM; subnanosecond access time; 2 Kbit; -2 V; 2 W

Subjects: Other field effect integrated circuits; Memory circuits; Semiconductor storage

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