Model for carrier capture and escape in multiquantum-well lasers: Determination of effective capture time and differential gain

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Model for carrier capture and escape in multiquantum-well lasers: Determination of effective capture time and differential gain

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A new model that includes the effects of band mixing, strain, space charge, impurity doping, 3D carrier reflections at QW boundaries and intersubband transitions is proposed to determine effective carrier capture time and differential gain in multiquantum-well (MQW) lasers. Results of numerical calculations of these dynamic parameters for 1.3 µm strained InGaAsP/InP MQW lasers are presented.

Inspec keywords: carrier mobility; III-V semiconductors; gallium arsenide; space-charge-limited conduction; quantum well lasers; indium compounds; semiconductor doping; semiconductor device models

Other keywords: dynamic parameters; effective carrier capture time; carrier capture; multiquantum-well lasers; differential gain; effective capture time; impurity doping; QW boundaries; band mixing; intersubband transitions; 3D carrier reflections; III-V semiconductors; 1.3 micrometre; carrier escape; InGaAsP-InP; space charge

Subjects: Doping and implantation of impurities; Semiconductor lasers; Lasing action in semiconductors; Semiconductor doping

References

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      • C.Y. Tsai , Y.H. Lo , R.M. Spencer , L.F. Eastman . Nonlinear gain coefficients in semiconductor quantum-well lasers: effectsof carrier diffusion capture, and escape. IEEE J. Sel. Top. Quantum Electron. , 2 , 316 - 330
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      • H. Lu , C. Blaauw , B. Benyon , G.P. Li , T. Makino . High-power and high-speed performance of 1.3 µm strained MQW gain-coupledDFB lasers. IEEE J. Sel. Top. Quantum Electron. , 2 , 375 - 381
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      • Plyavenek, A.G., Lyubarskii, A.V.: `Analysis of carrier capture and escape in InGaAsP/InP quantum well lasers', Digest 15th IEEE Int. Semiconduct. Laser Conf., 1996, Haifa, Israel, p. 101–102.
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      • S. Marcinkevicius , U. Olin , J. Wallin , G. Landgren . Electron relaxation and capture in InGaAsP quantum well laser structures. Appl. Phys. Lett. , 23 , 3164 - 3166
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