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Model for carrier capture and escape in multiquantum-well lasers: Determination of effective capture time and differential gain

Model for carrier capture and escape in multiquantum-well lasers: Determination of effective capture time and differential gain

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A new model that includes the effects of band mixing, strain, space charge, impurity doping, 3D carrier reflections at QW boundaries and intersubband transitions is proposed to determine effective carrier capture time and differential gain in multiquantum-well (MQW) lasers. Results of numerical calculations of these dynamic parameters for 1.3 µm strained InGaAsP/InP MQW lasers are presented.

References

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      • Plyavenek, A.G., Lyubarskii, A.V.: `Analysis of carrier capture and escape in InGaAsP/InP quantum well lasers', Digest 15th IEEE Int. Semiconduct. Laser Conf., 1996, Haifa, Israel, p. 101–102.
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      • H. Lu , C. Blaauw , B. Benyon , G.P. Li , T. Makino . High-power and high-speed performance of 1.3 µm strained MQW gain-coupledDFB lasers. IEEE J. Sel. Top. Quantum Electron. , 2 , 375 - 381
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