High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 µm surface emitting lasers

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High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 µm surface emitting lasers

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A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 µm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-3. Peak reflectivity up to 94% has been measured with only 11.5 periods.

Inspec keywords: gallium arsenide; aluminium compounds; laser transitions; semiconductor lasers; III-V semiconductors; tellurium; reflectivity; distributed Bragg reflector lasers; surface emitting lasers; laser mirrors; laser cavity resonators

Other keywords: strong N doping; 1.5 micron; Bragg mirror; lattice match; GaAsSb absorption; AlAsSb-GaAsSb:Te,N-InP; high reflectivity mirror; vertical cavity SEL; Te doping; Burstein-Moss shift; surface emitting lasers; VCSEL

Subjects: Semiconductor lasers; Laser resonators and cavities; Laser resonators and cavities; Lasing action in semiconductors; Optical lens and mirror systems; Design of specific laser systems

References

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