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Extraction of thermal time constant in HBTs using small signal measurements

Extraction of thermal time constant in HBTs using small signal measurements

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A novel method for finding the thermal time constant of HBTs is proposed. It utilises small signal measurements in the frequency domain of the typical negative differential resistance found in the active region, i.e. normal bias conditions for the device. In this way, nonlinearities in the thermal resistivity do not disturb the extraction and the device needs only to be characterised at one bias point.

Inspec keywords: negative resistance; thermal resistance; heterojunction bipolar transistors

Other keywords: thermal resistivity; frequency domain; thermal time constant; negative differential resistance; HBT; small signal measurement

Subjects: Bipolar transistors

References

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      • D.E. Dawson , A.K. Gupta , M.L. Salib . CW measurement of HBT thermalresistance. IEEE Trans. , 10 , 2235 - 2239
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      • Bruce, S., Rydberg, A., Schumacher, H., Erben, U., Luy, J.-F., Karlsteen, M., Willander, M.: `Development, implementation and verification of a physics-basedSi/SiGe HBT model for millimeter-wave non-linear circuit simulations', 26th European Microwave Conf., 1996, 2, Prague, Czech Republic, p. 903–905.
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      • Jakopovic, Z., Bencic, Z., Zunac, R.: `A correction of measured powerMOSFET's normalized temperature response because of a case temperaturerise', 5th European Conf. Power Electronics and Applications, 1993, 2, Brighton, England, p. 143–148.
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