10 W near-diffraction-limited peak pulsed power from Al-free, 0.98 µm-emitting phase-locked antiguided arrays

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10 W near-diffraction-limited peak pulsed power from Al-free, 0.98 µm-emitting phase-locked antiguided arrays

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Published

10 W peak-pulsed power emitted in a beam pattern 2×diffraction limit (DL) is obtained from a 40-element, 200 µm-aperture Al-free phase-locked antiguided array (λ = 0.98 µm). 60% of the power resides in the central lobe, and the external differential quantum efficiency is 54% for 1 mm-long optimised facet-coated devices.

Inspec keywords: integrated optics; laser transitions; semiconductor laser arrays; optical waveguides

Other keywords: semiconductor lasers; external differential quantum efficiency; 10 W; optimised facet-coated devices; 0.98 micron; central lobe; 54 percent; phase-locked antiguided arrays; near-diffraction-limited peak pulsed power; Al-free arrays

Subjects: Design of specific laser systems; Semiconductor lasers; Integrated optics; Optical waveguides; Integrated optics; Optical waveguides and couplers; Lasing action in semiconductors

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