The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94 A/W and a 3 dB bandwidth near 4 GHz at an operating voltage of 0 V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19970097
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