Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers
Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers
- Author(s): W. Jiang ; C. Gaw ; P. Kiely ; B. Lawrence ; M. Lebby ; P.R. Claisse
- DOI: 10.1049/el:19970088
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- Author(s): W. Jiang 1 ; C. Gaw 1 ; P. Kiely 1 ; B. Lawrence 1 ; M. Lebby 1 ; P.R. Claisse 2
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View affiliations
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Affiliations:
1: Phoenix Corporate Research Laboratories, Photonics Technology Center, Motorola, Tempe, USA
2: Semiconductor Product Sector, Motorola, Tempe, USA
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Affiliations:
1: Phoenix Corporate Research Laboratories, Photonics Technology Center, Motorola, Tempe, USA
- Source:
Volume 33, Issue 2,
16 January 1997,
p.
137 – 139
DOI: 10.1049/el:19970088 , Print ISSN 0013-5194, Online ISSN 1350-911X
The electroluminescence (EL) technique is used to analyse the degradation mode of VCSELs with proton implantation for current confinement. Point defects generated by the implantation in the active layer are believed to affect the VCSEL long term reliability.
Inspec keywords: point defects; aluminium compounds; electroluminescence; ion implantation; laser cavity resonators; surface emitting lasers; III-V semiconductors; semiconductor lasers; semiconductor device reliability; gallium arsenide
Other keywords:
Subjects: Laser resonators and cavities; Semiconductor lasers; Reliability; Doping and implantation of impurities; Maintenance and reliability; Optoelectronics manufacturing; Laser resonators and cavities; Design of specific laser systems; Electroluminescence (condensed matter); Lasing action in semiconductors; Ion beam effects
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