Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers

Author(s): W. Jiang ; C. Gaw ; P. Kiely ; B. Lawrence ; M. Lebby ; P.R. Claisse
DOI: 10.1049/el:19970088

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Author(s): W. Jiang ¹ ; C. Gaw ¹ ; P. Kiely ¹ ; B. Lawrence ¹ ; M. Lebby ¹ ; P.R. Claisse ²
- Affiliations: 1: Phoenix Corporate Research Laboratories, Photonics Technology Center, Motorola, Tempe, USA
  2: Semiconductor Product Sector, Motorola, Tempe, USA
Source: Volume 33, Issue 2, 16 January 1997, p. 137 – 139
DOI: 10.1049/el:19970088 , Print ISSN 0013-5194, Online ISSN 1350-911X

The electroluminescence (EL) technique is used to analyse the degradation mode of VCSELs with proton implantation for current confinement. Point defects generated by the implantation in the active layer are believed to affect the VCSEL long term reliability.

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Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers

Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers

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