InP/InGaAs double-HBT technology for high bit-rate communication circuits

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InP/InGaAs double-HBT technology for high bit-rate communication circuits

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A InP/InGaAs DHBT technology has been developed to meet the high speed requirements of circuits required in 20 Gbit/s optical communication links. High performance devices were achieved with a current gain over 100 and cutoff frequencies of > 50 GHz. The technology showed excellent behaviour in terms of yield and homogeneity. Over 20 Gbit/s digital ICs were realised: among them, a 20 Gbit/s external modulator driver, and a 32 Gbit/s 2:1 multiplexer.

Inspec keywords: driver circuits; III-V semiconductors; bipolar digital integrated circuits; indium compounds; gallium arsenide; multiplexing equipment; integrated circuit technology; heterojunction bipolar transistors; optical communication equipment

Other keywords: optical communication links; 20 Gbit/s; 32 Gbit/s; external modulator driver; 50 GHz; high bit-rate communication circuits; InP-InGaAs; double-HBT technology; multiplexer; DHBT technology; digital ICs

Subjects: Bipolar integrated circuits; Optical communication; Other digital circuits

References

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