Substrate engineering analysis of δ-doped Si0.8Ge0.2p-MOSFET transistors

Substrate engineering analysis of δ-doped Si0.8Ge0.2p-MOSFET transistors

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The effects of substrate engineering for δ-doped SiGe p-MOSFETs are analysed using a 3D device simulator, DAVINCI. The device uses the placement of an intrinsic buffer layer as well as an n+ control layer underneath the δ-doped layer in order to adjust the device characteristics. Results of the simulation showed that the devices have higher current driving capability compared to the conventional silicon p-MOSFETs. The electrical characteristics of the device were effectively controlled by varying the doping level and the thickness of either the buffer layer or the control layer.


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