Waveguide integrated 1.55 µm photodetector with 45 GHz bandwidth

Access Full Text

Waveguide integrated 1.55 µm photodetector with 45 GHz bandwidth

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The device design is intended to provide ultrafast photoresponse together with a high responsivity. A 3 dB bandwidth of 45 GHz and 90% internal quantum efficiency is achieved at 1.55 µm wavelength. High-speed operation with linear power response is obtained at power levels as high as 5 mW.

Inspec keywords: indium compounds; photodetectors; p-i-n photodiodes; III-V semiconductors; optical receivers; optical planar waveguides; optical fibres

Other keywords: 45 GHz; pin photodiodes; power levels; internal quantum efficiency; III-V semiconductors; ultrafast photoresponse; optical fibre receivers; 90 percent; linear power response; 5 mW; responsivity; evanescently coupled photodiodes; waveguide integrated photodetector; 1.55 micrometre; InP

Subjects: Optical communication; Integrated optics; Fibre optics; Photoelectric devices

References

    1. 1)
      • E.H. Böttcher , D. Bimberg . Millimeter wave distributed metal-semiconductor-metalphotodetectors. Appl. Phys. Lett. , 26 , 3648 - 3650
    2. 2)
      • D. Trommer , A. Umbach , W. Passenberg , G. Unterbörsch . A monolithically integratedbalanced mixer OEIC on InP for coherent receiver applications. IEEE Photonics Technol. Lett. , 1038 - 1040
    3. 3)
      • K.S. Giboney , R.L. Nagarajan , T.E. Reynolds , S.T. Allen , R.P. Mirin , M.J.W. Rodwell , J.E. Bowers . Travelling-wave photodetectors with 172 GHz bandwidth and 76 GHzbandwidth-efficiency product. IEEE Photonics Technol. Lett. , 4 , 412 - 414
    4. 4)
      • D. Wake , R.H. Walling , I.D. Henning , D.G. Parker . Planar-junction, top-illuminatedGaInAs/InP pin photodiode with bandwidth of 25 GHz. Electron. Lett. , 15 , 967 - 968
    5. 5)
      • P. Albrecht , H. Heidrich , R. Löffler , L. Mörl , F. Reier , C.M. Weinert . Integration ofpolarisation independent mode transformers with uncladded InGaAsP/InP ribwaveguides. Electron. Lett. , 13 , 1196 - 1198
    6. 6)
      • Lin, L.Y., Wu, M.C., Itoh, T., Vang, T.A., Muller, R.E., Sivco, D.L., Cho, A.Y.: `Velocity-matcheddistributed photodetectors with high saturation power and large bandwidth', Proc. 54th Device Research Conf., DRC '96, 24-26 June 1996, Santa Barbara, CA, p. 196–197.
    7. 7)
      • C. Bornholdt , W. Döldissen , F. Fiedler , R. Kaiser , K. Kowalski . Waveguide-integratedp-i-n photodiode on InP. Electron. Lett. , 1 , 2 - 3
    8. 8)
      • K. Kato , A. Kozen , Y. Muramato , Y. Itaya , T. Nagatsuma , M. Yaita . 110-GHz, 50%-efficiencymushroom-mesa waveguide pin photodiode for a 1.55-µm wavelength. IEEE Photonics Technol. Lett. , 6 , 719 - 721
    9. 9)
      • E.H. Böttcher , E. Dröge , D. Bimberg , A. Umbach , H. Engel . Ultra-wideband (>40 GHz)submicron InGaAs metal-semiconductor-metal photodetectors. IEEE Photonics Technol. Lett. , 9 , 1226 - 1228
    10. 10)
      • Umbach, A., Trommer, D., Siefke, A., Unterbörsch, G.: `50 GHz operation of waveguideintegrated photodiode at 1.55 µm', Proc. 21st European Conf. on OpticalCommunication (ECOC), 17-21 Sept. 1995, Brussels, Belgium, p. 1075–1078.
    11. 11)
      • van Waasen, S., Janssen, G., Bertenburg, R.M., Reuter, R., Tegude, F.J.: `Development of alow-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for20 Gb/s optoelectronic receivers', Proc. 8th Int. Conf. InP and Rel. Mat. (IPRM '96), 22-25 April 1996, Schwäbisch Gmünd, Germany, p. 642–645.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961425
Loading

Related content

content/journals/10.1049/el_19961425
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading