Direct photo-oxidation of silicon at a temperature of 250°C has been investigated using vacuum ultraviolet radiation. The oxidation rate is more than three times greater than that obtained at 350°C using a low pressure mercury lamp. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage and current-voltage measurements indicate these to be high quality layers.
Inspec keywords: ellipsometry; Fourier transform spectra; elemental semiconductors; insulating thin films; silicon; infrared spectra; oxidation
Other keywords:
Subjects: Surface treatment and degradation in semiconductor technology; Elemental semiconductors; Surface treatment (semiconductor technology); Infrared and Raman spectra in disordered solids (inc. glasses and polymers)
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