Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
- Author(s): H. Tews ; R. Averbeck ; A. Graber ; H. Riechert
- DOI: 10.1049/el:19961335
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- Author(s): H. Tews 1 ; R. Averbeck 1 ; A. Graber 1 ; H. Riechert 1
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View affiliations
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Affiliations:
1: Central Research Laboratories, Siemens AG, Munich, Germany
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Affiliations:
1: Central Research Laboratories, Siemens AG, Munich, Germany
- Source:
Volume 32, Issue 21,
10 October 1996,
p.
2004 – 2006
DOI: 10.1049/el:19961335 , Print ISSN 0013-5194, Online ISSN 1350-911X
Blue and green electroluminescence from GaN/InGaN pn junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths.
Inspec keywords: gallium compounds; photoluminescence; semiconductor growth; molecular beam epitaxial growth; p-n heterojunctions; light emitting diodes; indium compounds; electroluminescence; III-V semiconductors
Other keywords:
Subjects: Vacuum deposition; Light emitting diodes; Photoluminescence in tetrahedrally bonded nonmetals; Luminescent materials; Electroluminescence (condensed matter); Semiconductor junctions; Optical properties of nonmetallic thin films; Epitaxial growth
References
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