Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

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Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

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An Al0.3Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6 mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

Inspec keywords: hot electron transistors; negative resistance devices; high electron mobility transistors; doping profiles; electron traps; two-dimensional electron gas; III-V semiconductors; indium compounds; gallium arsenide; aluminium compounds

Other keywords: deep-level electron trapping effect; anomalous negative-differentiaI-resistance characteristics; logic circuits; 6.6 mA; large signal circuits; hot-electron real-space-transfer devices; drain current; 59 mA; Al0.3Ga0.7As-In0.15Ga0.85As-GaAs; 2D electron gas; step-doped-channel transistor; III-V semiconductors; SDCT; peak-to-valley current ratio

Subjects: Other field effect devices; Semiconductor doping

References

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