The authors report for the first time, normal incident infrared absorption around the wavelength of 13–15 µm from a 20 period InGaAs/GaAs quantum dot superlattice (QDS). The structure of a QDS has been confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8–14 µm quantum dot infrared detectors.
Inspec keywords: photoluminescence; indium compounds; III-V semiconductors; semiconductor superlattices; infrared detectors; light absorption; semiconductor quantum dots; transmission electron microscopy; gallium arsenide
Other keywords:
Subjects: Photodetectors; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Semiconductor superlattices, quantum wells and related structures; Photoluminescence in tetrahedrally bonded nonmetals
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