Submilliamp long wavelength vertical cavity lasers
Submilliamp long wavelength vertical cavity lasers
- Author(s): N.M. Margalit ; D.I. Babic ; K. Streubel ; R.P. Mirin ; R.L. Naone ; J.E. Bowers ; E.L. Hu
- DOI: 10.1049/el:19961099
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): N.M. Margalit 1 ; D.I. Babic 2 ; K. Streubel 3 ; R.P. Mirin 1 ; R.L. Naone 1 ; J.E. Bowers 1 ; E.L. Hu 1
-
-
View affiliations
-
Affiliations:
1: Department of Electrical and Computer Engineering, UCSB, Santa Barbara, USA
2: Department of Electrical and Computer Engineering, Hewlett-Packard Laboratories, Palo Alto, USA
3: Department of Electrical and Computer Engineering, Royal Institute of Technology, Stockholm, Sweden
-
Affiliations:
1: Department of Electrical and Computer Engineering, UCSB, Santa Barbara, USA
- Source:
Volume 32, Issue 18,
29 August 1996,
p.
1675 – 1677
DOI: 10.1049/el:19961099 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors demonstrate a low threshold laterally oxidised long wavelength (1.55 µm) vertical cavity laser. The devices exhibit the first submilliamp threshold current (0.8 mA) as well as the highest reported operating temperatures (64°C CW and 95°C pulsed) of any long wavelength vertical cavity laser.
Inspec keywords: surface emitting lasers; optical fibre communication; semiconductor lasers; optical transmitters
Other keywords:
Subjects: Optical communication; Semiconductor lasers; Design of specific laser systems; Optical communication devices, equipment and systems; Laser resonators and cavities; Lasing action in semiconductors; Laser resonators and cavities
References
-
-
1)
- D.I. Babic , K. Streuble , R.P. Mirin , N.M. Margalit , J.E. Bowers , E.L. Hu , D.E. Mars , L. Yang , K. Carey . Room-temperature continuous-waveoperation of 1.54 µm vertical-cavity lasers. IEEE Photonics Technol. Lett. , 11 , 1225 - 1227
-
2)
- Yang, G.M., MacDougal, M.H., Dapkus, P.D.: `Ultralow threshold VCSELs fabricated by selective oxidation from allepitaxial structure', Tech Dig. CLEO'95, 1995, Postdeadline paper CPD4.
-
3)
- E.R. Hegblom , D.I. Babic , B.J. Thibeault , L.A. Coldren . Estimation of scattering losses in dielectrically apertured verticalcavity lasers. Appl. Phys. Lett. , 13 , 1757 - 1759
-
4)
- Margalit, N.M., Babic, D.I., Streubel, K., Mirin, R.P., Mars, D.E., Zhang, S., Bowers, J.E., Hu, E.L.: `Laterally oxidised CW long-wavelength vertical cavity lasers', Tech. Dig. OFC'96, 1996, Postdeadline paper PD10.
-
5)
- K.L. Lear , K.D. Choquette , R.P. Schneider , S.P. Kilcocyne , K.M. Geib . Selectively oxidised vertical cavity surface emitting lasers with 50%power conversion efficiency. Electron. Lett. , 3 , 208 - 209
-
6)
- G.R. Hadley . Effective index model for vertical-cavitysurface-emitting lasers. Opt. Lett. , 13 , 1483 - 1485
-
1)