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High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

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The authors report excellent microwave characteristics of C-doped base InP/InGaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). A combination of a low resistance base layer (2.5 × 1019 cm-3, 700 Å) and a very narrow emitter mesa structure (0.5 × 4.7 µm2) enabled us to achieve a record maximum oscillation frequency (fmax) of 170 GHz at JC = 1.7 × 105 A/cm2 for C-doped base InP/InGaAs HBTs.

References

    1. 1)
      • R.C. Gee , C.L. Lin , C.W. Farley , C.W. Seabury , J.A. Higgins , P.D. Kirchner , J.M. Woodall , P.M. Asbeck . InP/InGaAs double heterojunction bipolar transistors incorporating carbon-dopedbase and superlattice graded base-collector junctions. Electron. Lett. , 850 - 851
    2. 2)
      • H. Ito , S. Yamahata , N. Shigekawa , K. Kurishima , Y. Matsuoka . High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistorsgrown by MOCVD. Electron. Lett. , 2128 - 2130
    3. 3)
      • T. Oka , T. Tanoue , H. Masuda , K. Ouchi , T. Mozume . InP/InGaAs heterojunction bipolar transistor with extremely high fTover 200 GHz. Electron. Lett. , 2044 - 2045
    4. 4)
      • J.-I. Song , W.-P. Hong , C.J. Palmstrøm , B.P. Van der Gaag , K.B. Chough . Ultra-high-speed InP/InGaAs heterojunction bipolar transistors. Electron Dev. Lett. , 94 - 96
    5. 5)
      • H. Nakajima , T. Ishibashi . Monte Carlo analysis of nonequilibrium electron transport in InAlGaAs/InGaAsHBTs. IEEE Trans. Electron Dev. , 1950 - 1956
    6. 6)
      • Yamahata, S., Kurishima, K., Ito, H., Matsuoka, Y.: `Over-220-GHz-', Tech. Dig. GaAs IC Symp., 1995, p. 163–166.
    7. 7)
      • J.-I. Song , W.-P. Hong , C.J. Palmstrøm , B.P. Van der Gaag , K.B. Chough . Millimetre-wave InP/InGaAs heterojunction bipolar transistors with asubpicosecond extrinsic delay time. Electron. Lett. , 456 - 457
    8. 8)
      • S.A. Stockman , A.W. Hanson , C.M. Colomb , M.T. Fresina , J.E. Baker , G.E. Stillman . Comparison of TMGa and TEGa for low-temperature metalorganic chemicalvapour deposition growth of CCl4-doped InGaAs. J. Electronic Mater. , 791 - 799
    9. 9)
      • J.-I. Song , W.-P. Hong , C.J. Palmstrøm , J.R. Hayes , K.B. Chough , B.P. Van der Gaag . Microwave characteristics of a carbon-doped base InP/InGaAs heterojunctionbipolar transistors grown by chemical beam epitaxy. Electron. Lett. , 1893 - 1894
    10. 10)
      • H. Ito , S. Yamahata , N. Shigekawa , K. Kurishima , Y. Matsuoka . Growth and characterisation of high-speed doped base InP/InGaAs heterojunctionbipolar transistors by metalorganic chemical vapour deposition. Jpn J. Appl. Phys.
    11. 11)
      • Seabury, C.W., Farley, C.W., McDermott, B.T., Higgins, J.A., Lin, C.L., Kirchner, P.J., Woodall, J.M., Gee, R.C.: `Base recombination in high performance InGaAs/InP HBTs', IVA-5, Proc. Dev. Res. Conf, 1993.
    12. 12)
      • Chau, H.-F., Kao, Y.-C.: `High ', Proc. IEDM, 1993, p. 783–786.
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