Ito, H.; Yamahata, S.; Shigekawa, N.; Kurishima, K.: 'High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD', Electronics Letters, 1996, 32, (15), p. 1415-1416, DOI: 10.1049/el:19960915 IET Digital Library, https://digital-library.theiet.org/;jsessionid=4k0wtmtg2lkhg.x-iet-live-01content/journals/10.1049/el_19960915