Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H+ ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating.
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Digital Instruments, Inc., 520 E. Montecito St., Santa Barbara,CA 93103.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960882
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