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Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

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It is demonstrated that a novel thin film growth technique, hollow cathode PECVD, previously used to produce low-loss glass waveguides, can also produce intrinsically (no hydrogen loading) very photosensitive (to UV) germanosilicate waveguide material. In addition, the sign of the photosensitivity can be altered by varying the growth conditions.

Inspec keywords: optical fabrication; optical planar waveguides; plasma CVD coatings; plasma CVD; silicon compounds; optical films; germanium

Other keywords: SiO2:Ge; waveguide material; thin film growth technique; growth conditions; photosensitivity; hollow cathode PECVD

Subjects: Integrated optics; Integrated optics; Optical materials; Optical fabrication, surface grinding; Light-sensitive materials; Optical waveguides and couplers; Optical waveguides; Chemical vapour deposition; Chemical vapour deposition

References

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      • M.V. Bazylenko , M. Gross , A. Simonian , P. L. Chu . Pure fluorine-doped and silica films deposited in a hollow cathode reactorfor integrated optics applications. J. Vac. Sci. Technol. , 2 , 336 - 345
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      • G.D. Maxwell , R. Kashyap , B.J. Ainslie , D.L. Williams , J.R. Armitage . UV written 1.5 µm reflection filtersin single mode planar silica guides. Electron. Lett. , 22 , 2106 - 2107
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      • G.D. Maxwell , B.J. Ainslie . Demonstration of a directly written directionalcoupler using UV-induced photosensitivity in a planar silica waveguide. Electron.Lett. , 2 , 95 - 96
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