Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 µm n-type modulation-doped strained multiquantum well lasers

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Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 µm n-type modulation-doped strained multiquantum well lasers

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The dependence of lasing properties on the donor concentration is experimentally investigated for 1.3 µm n-type modulation-doped (MD) strained multiquantum well (MQW) lasers. The threshold current density has a minimum at a donor concentration of 3 × 1018 cm-3; the carrier lifetime and the optical gain coefficient decrease with the donor concentration. The turn-on delay time of 100 ps can be expected at 85°C when the MD-MQW structure is applied to a low-leakage buried heterostructure laser.

Inspec keywords: doping profiles; carrier lifetime; leakage currents; quantum well lasers; optical interconnections; semiconductor doping

Other keywords: turn-on delay time; 100 ps; 85 degC; lasing properties; optical gain coefficient; donor concentration; n-type modulation-doped strained multiquantum well lasers; threshold current density; carrier lifetime; low-leakage buried heterostructure laser; 1.3 micrometre

Subjects: Semiconductor doping; Impurity concentration, distribution, and gradients; Semiconductor lasers; Lasing action in semiconductors; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)

References

    1. 1)
      • K. Uomi . Modulation-doped multi-quantum well (MD-MQW) lasers. I. theory. Jpn. J. Appl. Phys. , 1 , 81 - 87
    2. 2)
      • K. Uomi , T. Tsuchiya , M. Komori , A. Oka , T. Kawano , A. Oishi . Ultralow threshold 1.3 µm InGaAsP-InP compressively-strainedmultiquantum-well monolithic laser array for parallel high-density opticalinterconnects. IEEE J. Sel. Topics Quantum Electron. , 2 , 203 - 210
    3. 3)
      • Niwa, A., Ohjoshi, T., Uomi, K.: `Doping-type dependence ofthreshold current and turn-on delay time in 1.3 µm modulation-doped strainedquantum well lasers: theoretical analysis', P16, Tech. Dig. CLEO/Pacific Rim '95, 1995, Makuhari, p. 254–255.
    4. 4)
      • M. Aoki , T. Tsuchiya , K. Nakahara , M. Komori , K. Uomi . High-power and wide-temperature-range operation of InGaAsP-InP strainedMQW lasers with reverse-mesa ridge-waveguide structure. IEEE Photonics Technol. Lett. , 1 , 13 - 15
    5. 5)
      • P.W.A. McLlory , A. Kurobe , Y. Uematsu . Analysis andapplication of theoretical gain curves to the design of multi-quantum-well lasers. IEEE J. Quantum Electron. , 12 , 1958 - 1963
    6. 6)
      • T. Yamamuto , T. Watanabe , S. Ide , K. Tanaka , H. Nobuhara , K. Wakao . Low threshold current density 1.3 µm strained-layerquantum-well lasers using n-type modulation doping. IEEE Photonics Tech. Lett. , 10 , 1165 - 1166
    7. 7)
      • K. Nakahara , K. Uomi , T. Tsuchiya , A. Niwa . Reducedturn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strainedmultiquantum well lasers. Electron. Lett. , 10 , 809 - 811
    8. 8)
      • A. Niwa , T. Ohtoshi , K. Uomi , K. Nakahara . Doping-type dependence of turn-ondelay time in 1.3 µm InGaAsP/InP modulation-doped strained quantum well lasers. IEEE Photonics Technol. Lett. , 3 , 328 - 330
    9. 9)
      • K. Uomi , T. Tsuchiya , M. Komori , A. Oka , K. Shinoda , A. Oishi . Extremely low threshold (0.56 mA) operation in 1.3 µm InGaAsP/InPcompressive-strained-MQW lasers. Electron. Lett. , 24 , 2037 - 2038
    10. 10)
      • T. Tsuchiya , M. Komori , K. Uomi , A. Oka , T. Kawano , A. Oishi . Investigation of effect of strain on low-threshold 1.3 µm InGaAsPstrained-layer quantum well lasers. Electron. Lett. , 10 , 788 - 789
    11. 11)
      • Steinhagen, F., Lösch, R., Schlapp, W., Nickel, H., Hansmann, S., Hillmer, H., Janning, H., Hartnagel, H.L., Burkhard, H.: `MBE grown strained and unstrained InGaAs/InAlGaAs MQWlasers', WF3, Proceedings of InP and Related Materials, 1993, p. 549–552.
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