Channel waveguides formed by ion implantation of 20% Ge-doped silica
Channel waveguides formed by ion implantation of 20% Ge-doped silica
- Author(s): P.W. Leech ; M. Faith ; M.C. Ridgway ; O. Leistiko
- DOI: 10.1049/el:19960684
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- Author(s): P.W. Leech 1 ; M. Faith 1 ; M.C. Ridgway 2 ; O. Leistiko 3
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View affiliations
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Affiliations:
1: Telstra Research Laboratories, Clayton, Australia
2: Research School of Physical Sciences and Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
3: Mikroelektronik Centret, DTU, Lyngby, Denmark
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Affiliations:
1: Telstra Research Laboratories, Clayton, Australia
- Source:
Volume 32, Issue 11,
23 May 1996,
p.
1000 – 1002
DOI: 10.1049/el:19960684 , Print ISSN 0013-5194, Online ISSN 1350-911X
The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15–0.25 dB/cm at 1300 nm and 1.5–1.8 dB/cm at 1550 nm.
Inspec keywords: plasma CVD; ion implantation; optical glass; germanium; optical waveguides; integrated optics; optical loss measurement
Other keywords:
Subjects: Optical variables measurement; Optical materials; Integrated optics; Optical waveguides; Chemical vapour deposition; Chemical vapour deposition; Optical glass; Integrated optics; Optical testing techniques; Optical waveguides and couplers
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