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Low threshold room temperature continuous wave operation of 1.3 µm GaInAsP/InP strained layer multiquantum well surface emitting laser

Low threshold room temperature continuous wave operation of 1.3 µm GaInAsP/InP strained layer multiquantum well surface emitting laser

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A 1.3 µm GaInAsP/In strained layer multiquantum well surface emitting (SE) laser has been demonstrated. Room temperature continuous wave (CW) operation is obtained. The threshold current is 4.7 mA, which is a record low value for a 1.3 µm SE laser, at 20°C. The highest CW operating temperature of 22°C for a 1.3 µm SE laser is also achieved.

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