Light emitting real-space transfer devices fabricated with strained GaAs/In0.2Ga0.8As/AlGaAs heterostructures

Light emitting real-space transfer devices fabricated with strained GaAs/In0.2Ga0.8As/AlGaAs heterostructures

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Light emitting devices based on real-space electron transfer are implemented with strained GaAs/InGaAs/AlGaAs heterostructures on GaAs substrates. Both GaAs channel and In0.2Ga0.8As channel devices are fabricated. The device energy band diagrams are simulated by using the MEDICI program. The optical measurement shows that the photocurrent on/off ratio of InGaAs channel devices is better than that of GaAs channel devices.


    1. 1)
      • Novel real-space hot-electron transfer devices
    2. 2)
      • Charge injection transistor based on real-space hot-electron transfer
    3. 3)
      • Charge injection transistors and logic circuits
    4. 4)
      • Light emitting charge injection transistor with p-type collector
    5. 5)
      • Light-emitting transistor based on real-space transfer: electrical andoptical properties
    6. 6)
      • Multiterminal light-emitting logic device electrically reprogrammablebetween ORand NAND functions
    7. 7)
      • Collector-up light-emittingcharge injection transistors in n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAsheterostructures
    8. 8)
      • Pd/Ge ohmic contacts to n-type GaAs formed by rapid thermalannealing
    9. 9)
      • AlGaAs/GaAs charge injection transistor/negative resistancefield-effect transistor fabricated with shallow Pd/Ge ohmic contacts
    10. 10)
      • Technology Modeling Associates, Inc., `MEDICI manual, version 1.1', 1993
    11. 11)
      • Physics of real-space transfer transistors
    12. 12)
      • Enhancement of electron transfer and negative differentialresistance in GaAs-based real-space transfer devices by using strained InGaAs channellayer
    13. 13)
      • Ultrahigh and controllable drain current peak-to-valley ratioin negative resistance field-effect transistors with a strained InGaAs channel

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