Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The fabrication of 1.0 µm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275 mV, transconductance of 650 mS/mm, output conductance of 7.0 mS/mm, and an off-state breakdown voltage of 16 V. The devices exhibited excellent RF performance with an ft of 35 GHz and an fmax of 80 GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

References

    1. 1)
      • M. Tong , K. Nummila , J.-W. Seo , A. Ketterson , I. Adesida . Process forenhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs usingselective wet gate recessing. Electron. Lett. , 1633 - 1634
    2. 2)
      • Wilks, S., Jenkings, L., Morris, J., Clark, S., Williams, R.: Proc. 3rd Int. Conf.InP and Related Materials, 1991, p. 147.
    3. 3)
      • M. Tong , K. Nummila , A. Ketterson , I. Adesida , C. Caneau , R. Bhat . InAlAs/InGaAs/InP MODFETs with uniform threshold voltage obtained byselectivewet gate recess. Electron. Lett. , 525 - 527
    4. 4)
      • Harada, N., Kuroda, S., Katakami, T., Hikosaka, K., Mimura, T., Abe, M.: `Pt-basedgate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration', Proc. 3rd Int. Conf. InP and Related Materials, 1991, p. 377–350.
    5. 5)
      • A. Fricke , G. Stareev , T. Kummetz , D. Sowada , J. Mahnss , W. Kowalsky , K. Ebeling . 1.09-eV Schottky barrier height of nearly ideal Pt-Au contacts directlydeposited on n- and p+ n-Al0.48In0.52As layers. Appl. Phys. Lett. , 755 - 757
    6. 6)
      • L.F. Palmateer , P.J. Tasker , W.J. Schaff , L.D. Nguyen , L.F. Eastman . DCand RF measurments of the kink effect in 0.2 µm gate length AlInAs/GaInAs/InPmodulation-doped field-effect transistors. Appl. Phys. Lett. , 2139 - 2141
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960652
Loading

Related content

content/journals/10.1049/el_19960652
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address