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High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

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The fabrication of 1.0 µm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275 mV, transconductance of 650 mS/mm, output conductance of 7.0 mS/mm, and an off-state breakdown voltage of 16 V. The devices exhibited excellent RF performance with an ft of 35 GHz and an fmax of 80 GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

References

    1. 1)
      • Process forenhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs usingselective wet gate recessing
    2. 2)
      • Harada, N., Kuroda, S., Katakami, T., Hikosaka, K., Mimura, T., Abe, M.: `Pt-basedgate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration', Proc. 3rd Int. Conf. InP and Related Materials, 1991, p. 377–350
    3. 3)
      • Wilks, S., Jenkings, L., Morris, J., Clark, S., Williams, R.: Proc. 3rd Int. Conf.InP and Related Materials, 1991, p. 147
    4. 4)
      • 1.09-eV Schottky barrier height of nearly ideal Pt-Au contacts directlydeposited on n- and p+ n-Al0.48In0.52As layers
    5. 5)
      • DCand RF measurments of the kink effect in 0.2 µm gate length AlInAs/GaInAs/InPmodulation-doped field-effect transistors
    6. 6)
      • InAlAs/InGaAs/InP MODFETs with uniform threshold voltage obtained byselectivewet gate recess
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960652
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