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Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer

Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer

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A novel InAlAs/InGaAs heterojunction FET (HJFET), with an AlAs/InAs superlattice inserted between an InAlAs Schottky layer and an InAlAs donor layer, is proposed. The developed device exhibited initial DC characteristics identical to those of the conventional lattice-matched HJFET and improved thermal stability owing to the inserted superlattice layer acting as a barrier against impurity diffusion.

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