Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

  • Author(s): J. Van de Casteele 1 ; J.P. Vilcot 1 ; J.P. Gouy 1 ; F. Mollot 2 ; D. Decoster 1
    • View affiliations
    • Affiliations: 1: Institut d'Electronique et de Microélectronique du Nord (IEMN), UMR CNRS 9929, Département Hyperfréquences et Semiconducteurs, Domaine Universitaire et Scientifique de Villeneuve d'Ascq, Villeneuve d'Ascq Cedex, France
      2: Institut d'Electronique et de Microélectronique du Nord (IEMN), UMR CNRS 9929, Département ISEN, Domaine Universitaire et Scientifique de Villeneuve d'Ascq, Villeneuve d'Ascq Cedex, France
  • Source: Volume 32, Issue 11, 23 May 1996, p. 1030 – 1032
    DOI:  10.1049/el:19960636 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

Gain nonlinearities at low optical power of an edge coupled GaInAs/InP heterojunction bipolar phototransistor are used to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated, since the other one is RF or microwave modulated. Experiments carried out for 2 GHz and 2 kHz, respectively, show the mixing of the two demodulated electrical signals in the phototransistor.

Inspec keywords: phototransistors; indium compounds; laser beams; multiwave mixing; demodulation; gallium arsenide; heterojunction bipolar transistors; III-V semiconductors; electro-optical modulation

Other keywords: demodulated electrical signals; electro-optical mixing; low optical power; GaInAs-InP; low frequency range modulated; optical demodulation product mixing; microwave modulated; edge-coupled GaInAs/InP heterojunction phototransistor; laser beams; gain nonlinearities; 2 GHz; edge coupled GaInAs/InP heterojunction bipolar phototransistor; 2 kHz; RF modulated

Subjects: Laser beam interactions and properties; Electro-optical devices; Nonlinear optics and devices; Bipolar transistors; Modulation and coding methods; Photoelectric devices

References

    1. 1)
      • H. Fukano , Y. Takanashi , M. Fujimoto . High-speed InP-GaInAs heterojunction phototransistors employing a nonalloyedelectrode metal as a reflector. IEEE J. Quantum Electron. , 12 , 2889 - 2895
    2. 2)
      • Z. Urey , D. Wake , D.J. Newson , I.D. Henning . Comparison of InGaAs transistors as optoelectronic mixers. Electron. Lett. , 20 , 1796 - 1797
    3. 3)
      • D. Wake , D.J. Newson , M.J. Harlow , I.D. Henning . Optically biased, edge-coupled InP/InGaAs heterojunction phototransistor. Electron. Lett. , 25 , 2217 - 2219
    4. 4)
      • J.C. Campbell , A.G. Dentai , C.A. Burrus , J.F. Ferguson . High sensitivity InP/InGaAs heterojunction phototransitors. Electron. Lett. , 18 , 713 - 714
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960636
Loading

Related content

content/journals/10.1049/el_19960636
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address