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Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor

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Gain nonlinearities at low optical power of an edge coupled GaInAs/InP heterojunction bipolar phototransistor are used to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated, since the other one is RF or microwave modulated. Experiments carried out for 2 GHz and 2 kHz, respectively, show the mixing of the two demodulated electrical signals in the phototransistor.

References

    1. 1)
      • Optically biased, edge-coupled InP/InGaAs heterojunction phototransistor
    2. 2)
      • High sensitivity InP/InGaAs heterojunction phototransitors
    3. 3)
      • Comparison of InGaAs transistors as optoelectronic mixers
    4. 4)
      • High-speed InP-GaInAs heterojunction phototransistors employing a nonalloyedelectrode metal as a reflector
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960636
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