Implant isolation scheme for current confinement in graded-gap Gunn diodes

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Implant isolation scheme for current confinement in graded-gap Gunn diodes

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Multiple energy proton implants have been established as an alternative to wet chemical etching for the definition of electrically active areas of low-medium power graded-gap Gunn diodes. DC characteristics, output power and noise performance are identical to diodes from the same wafer, fabricated using the existing mesa process. Thus implant isolation is well suited to Gunn diode fabrication, resulting in a planar process.

Inspec keywords: semiconductor device noise; aluminium compounds; isolation technology; ion implantation; III-V semiconductors; Gunn diodes; gallium arsenide

Other keywords: AlGaAs; low-medium power graded-gap Gunn diodes; Gunn diode fabrication; DC characteristics; planar process; noise performance; current confinement; output power; multiple energy proton implants; implant isolation; electrically active areas; graded-gap Gunn diodes

Subjects: Bulk effect devices; Solid-state microwave circuits and devices; Semiconductor doping

References

    1. 1)
      • C. Ascherton . Proton beam modification of selected AIIIBV compounds. Phys. Status Solidi A , 11
    2. 2)
      • N.R. Couch , H. Spooner , P.H. Beton , M.J. Kelly , M.E. Lee , P.K. Rees , T.M. Kerr . High performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz. IEEE Electron. Device Lett. , 7
    3. 3)
      • S.J. Pearton . Ion implantation for isolatin of III-V semiconductors. Mater. Sci. Rep. , 8 , 313 - 367
    4. 4)
      • Microwave Products Handbook. GEC Plessey Semiconductors,February 1994, pp. 181–193.
    5. 5)
      • Dale, I., Stephens, J.R.P., Bird, J.: `Fundamental mode graded gap Gunn diodeoperation at 77 and 84 GHz.', Conf. Proc., Microwaves '94, 25-27 October 1994.
    6. 6)
      • S. Hutchinson , M. Carr , R. Gwilliam , M.J. Kelly , B.J. Sealy . Effect of protonisolation on the DC and RF performance of GaAs Planar Doped Barrier diodes. Electron. Lett. , 7 , 583 - 585
    7. 7)
      • J.B. Gunn . Microwave oscillations of current in III-V semiconductors. Solid State Commun. , 88 - 91
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