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Implant isolation scheme for current confinement in graded-gap Gunn diodes

Implant isolation scheme for current confinement in graded-gap Gunn diodes

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Multiple energy proton implants have been established as an alternative to wet chemical etching for the definition of electrically active areas of low-medium power graded-gap Gunn diodes. DC characteristics, output power and noise performance are identical to diodes from the same wafer, fabricated using the existing mesa process. Thus implant isolation is well suited to Gunn diode fabrication, resulting in a planar process.

References

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      • Microwave Products Handbook. GEC Plessey Semiconductors,February 1994, pp. 181–193.
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