Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

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A comprehensive modelling of the band-to-band tunnelling gate induced drain leakage (GIDL) current is conducted, based on exact WKB tunnel transparency calculations. The authors' GIDL model explains reasonably well the asymmetrical variations of the GIDL current with gate and drain voltages. In particular, it makes it possible to obtain a quantitative description of the evolution of the logarithmic slope of the GIDL current against the reciprocal effective electric field with the gate and drain voltages.


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