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Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors

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A comprehensive modelling of the band-to-band tunnelling gate induced drain leakage (GIDL) current is conducted, based on exact WKB tunnel transparency calculations. The authors' GIDL model explains reasonably well the asymmetrical variations of the GIDL current with gate and drain voltages. In particular, it makes it possible to obtain a quantitative description of the evolution of the logarithmic slope of the GIDL current against the reciprocal effective electric field with the gate and drain voltages.

References

    1. 1)
      • J. Chen , T.Y. Chan , I.C. Chen , P.K. Ko , C. Hu . Sub breakdown drain leakage currentin MOSFET. IEEE Electron Device Lett. , 515 - 517
    2. 2)
      • Chan, T.Y., Chen, J., Ko, P.K., Hu, C.: `The impact of gate induced drain leakage current onMOSFET scaling', IEEE IEDM Tech. Dig., 1987, p. 718–721.
    3. 3)
      • Kurimoto, K., Odake, Y., Odanaka, S.: `Drain leakage current characteristics due toband-to-band tunnelling in LDD MOS devices', IEEE IEDM Tech. Dig., 1989, p. 621–624.
    4. 4)
      • T. Endoh , R. Shirota , M. Momodomi , F. Masuoka . An accurate model of subbreakdown due to Band-to-Band tunnelling and some applications. IEEE Trans. Electron Devices
    5. 5)
      • Wann, H.J., Ko, P.K., Hu, C.: `Gate induced band-to band tunnelling leakage current inLDD MOSFETs', IEDM Tech. Dig., 1992, p. 147.
    6. 6)
      • S. Parke , J.E. Moon , H.J.C. Wann , P.K. Ko , C. Hu . Design for suppression of gate induceddrain leakage in LDD MOSFETs using a quasi-two dimensional analytical model. IEEE Trans. Electron Devices , 7 , 1694 - 1703
    7. 7)
      • S. Tanaka . Theory of drain leakage current in Silicon MOSFETs. Sol. State Electron. , 3 , 683 - 691
    8. 8)
      • S.M. Sze . (1969) Physics of Semiconductor Devices.
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