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Multipeak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes

Multipeak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes

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The authors report a simple method for decreasing the valley current density and therefore increasing the peak-to-valley current ratio (PVCR) so that it reached 360 at room temperature in GaAs/In0.59Ga0.41As/InAs multi-stepped quantum well resonant interband tunnelling diodes (MSQW RITDs) using a GaAs undoping spacer layer. The PVCR is better data than that of other RITDs, to the knowledge of the authors. Multiple peak resonant tunnelling has been observed in this structure as the undoped GaAs spacer layer is involved.

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