Ion-implanted 0.4 µm wide 2-D MESFET for low power electronics

Ion-implanted 0.4 µm wide 2-D MESFET for low power electronics

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Two-dimensional (2-D) MESFETs with 0.4 µm channel widths have been fabricated on ion-implanted n-GaAs material. The 2-D MESFET uses sidewall Schottky contacts on either side of an Si-doped channel to laterally modulate the current. The peak drain current is 370 mA/mm and the peak transconductance is 295 mS/mm at room temperature. The narrow channel effect and channel length modulation have been reduced in this device.


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