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Ion-implanted 0.4 µm wide 2-D MESFET for low power electronics

Ion-implanted 0.4 µm wide 2-D MESFET for low power electronics

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Two-dimensional (2-D) MESFETs with 0.4 µm channel widths have been fabricated on ion-implanted n-GaAs material. The 2-D MESFET uses sidewall Schottky contacts on either side of an Si-doped channel to laterally modulate the current. The peak drain current is 370 mA/mm and the peak transconductance is 295 mS/mm at room temperature. The narrow channel effect and channel length modulation have been reduced in this device.

References

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      • W.C.B. Peatman , H. Park , M. Shur . Two-dimensional metal-semiconductorfield effect transistor for ultra low power circuit applications. IEEE Electron Device Lett. , 7 , 245 - 247
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      • W.C.B. Peatman , M.J. Hurt , H. Park , T. Ytterdal , R. Tsai , M. Shur . Narrow channel 2-D MESFET for low power electronics. IEEE Trans. Electron Devices , 9 , 1569 - 1573
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      • W.C.B. Peatman , R. Tsai , T. Ytterdal , M.J. Hurt , H. Park , J. Gonzales , M. Shur . Sub-half-micrometer width 2-D MESFET. IEEE Electron Device Lett. , 2 , 40 - 42
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      • Peatman, W.C.B., Hurt, M.J., Park, H., Tsai, R., Ytterdal, T., Gonzales, J., Shur, M.: `Scaling of 2-D MESFETs for ultra low power applications', Digest 53rd AnnualDevice Research Conf., 1995, Charlottesville, VA, p. 30–31.
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      • Hurt, M.J., Peatman, W.C.B., Tsai, R., Moon, B.J., Ytterdal, T., Shur, M.: `Comparison of 2-D and 3-D side-gated FETs', Proc. Int. SemiconductorDevice Research Symp., 1995, Charlottesville, VA, p. 79–82.
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