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1887

Colour detection using a buried double p-n junction structure implemented in the CMOS process

Colour detection using a buried double p-n junction structure implemented in the CMOS process

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The authors present a novel technique for monochromatic colour detection. By using a buried double p-n junction (BDJ) structure, wavelength-dependent photocurrents I1 and I2 can be measured. And the incident light wavelength can be identified from the ratio I2/I1. The device operation was verified with a test circuit implemented in CMOS process.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960337
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