Efficient 4.2 µm light emitting diodes for detecting CO2 at room temperature

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Efficient 4.2 µm light emitting diodes for detecting CO2 at room temperature

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InAs0.91Sb0.09 light emitting diodes (LEDs) were grown on p-type GaSb substrates using liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 4.2 µm and can be used to fabricate infrared carbon dioxide (CO2) gas sensors for the cost effective detection and monitoring of CO2 gas in various applications.

Inspec keywords: gallium compounds; gas sensors; III-V semiconductors; liquid phase epitaxial growth; carbon compounds; light emitting diodes; semiconductor epitaxial layers; semiconductor growth; indium compounds

Other keywords: InAs0.91Sb0.09-GaSb; liquid phase epitaxy; gas monitoring; infrared emission; cost effective detection; CO2; gas sensors; 4.2 micrometre; light emitting diodes

Subjects: Chemical variables measurement; Epitaxial growth; Light emitting diodes; Chemical sensors; II-VI and III-V semiconductors

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