Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains

Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipoiar action and punchthrough susceptibility. The authors compare the properties of elevated source and drain devices with and without Si1-xGex in the source and drain regions. We show that the parasitic bipolar gain is reduced by a factor of 18 and that the punchthrough effects seen in silicon devices are absent in the Si0.8Ge0.2 devices.

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960190
Loading

Related content

content/journals/10.1049/el_19960190
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address