Spectral control in multisection AlGaAs SQW superluminescent diodes at 800 nm

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Spectral control in multisection AlGaAs SQW superluminescent diodes at 800 nm

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It is shown that multielectrode pumping allows a significant increase in the output power of quantum well SLDs in the broad spectrum operating regime. More than 60 nm spectral width at output power ranges from 2 to 23 mW was obtained by two-electrode pumping of the active region of AlGaAs SQW SLD. The possibility of controlling the form of the SQW SLD spectrum by multielectrode pumping and central wavelength switching of a 20 nm FWHM (Gaussian profile) over 40 nm is shown. The coherence length of the SLDs estimated using the Mandel approach is 7 mm at 2 mW output, increasing to 11 mm at 23 mW.

Inspec keywords: superluminescent diodes; semiconductor quantum wells; spectral line breadth; aluminium compounds; current density; gallium arsenide; III-V semiconductors

Other keywords: 2 to 23 mW; single quantum well; 800 nm; Gaussian profile; central wavelength switching; spectral control; multielectrode pumping; 7 to 11 mm; AlGaAs; broad spectrum operating regime; multisection SQW superluminescent diodes; two-electrode pumping

Subjects: Semiconductor superlattices, quantum wells and related structures; Light emitting diodes

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19960137
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