Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ~600°C by electron beam evaporation using a Gd3Ga5O12 single crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance-voltage measurements.
Inspec keywords: molecular beam epitaxial growth; inversion layers; gallium compounds; semiconductor-insulator boundaries; gallium arsenide; III-V semiconductors
Other keywords:
Subjects: Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures; II-VI and III-V semiconductors; Epitaxial growth; Vacuum deposition
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