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Carrier concentration effects on hot electrons noise in n+nn+ Al0.25Ga0.75As devices

Carrier concentration effects on hot electrons noise in n+nn+ Al0.25Ga0.75As devices

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High frequency noise of Al0.25Ga0.75As resistors with two different doping levels was measured against electric field. The noise temperatures and the diffusion coefficients are discussed in their relation to carrier concentrations. The results show that 1/f noise is observed in the hot carrier range.

Inspec keywords: semiconductor device noise; doping profiles; gallium arsenide; III-V semiconductors; 1/f noise; carrier density; electric noise measurement; hot carriers; aluminium compounds; microwave transistors

Other keywords: l/f noise; doping levels; n+nn+ devices; microwave transistors; Al0.25Ga0.75As; carrier concentration effects; diffusion coefficients; hot electron noise; noise temperatures; high frequency noise

Subjects: Solid-state microwave circuits and devices; Other electric variables measurement; Semiconductor doping

References

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      • F.N. Hooge . 1/f noise sources. IEEE Trans. , 11 , 1926 - 1935
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      • V. Bareikis , J. Liberis , I. Matulioene , A. Matulionis , P. Sakalas . Experiments on hot electron noise in semiconductor materials for high-speeddevices. IEEE Trans. , 11 , 2050 - 2060
    3. 3)
      • M. de Murcia , D. Gasquet , A. Elamri , J.P. Nougier , J. Vanbremeersch . Diffusion and noise in GaAs material and devices. IEEE Trans. , 11 , 2531 - 2539
    4. 4)
      • M. de Murcia , E. Richard , D. Gasquet , J.P. Dubuc , J. Vanbremeersch , J. Zimmermann . High frequency noise and diffusion coefficient of hot electrons in bulkAl0.25Ga0.75As. Solid-State Electron. , 8 , 1477 - 1483
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      • F. Pascal , M. de Murcia , G. Lecoy , L.K. Vandamme . 1/f and G-R noise in AlGaAs epitaxial layers. Solid-State Electron. , 8 , 1503 - 1508
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