Moderate-dose proton implantation through double-barrier structures

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Moderate-dose proton implantation through double-barrier structures

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Published

Long-range proton implantation has been carried out through double-barrier diodes, as may be required during vertical monolithic-integration. The anneal-induced recovery of the I-V characteristics is shown to improve if the implantation is carried out above room-temperature. After annealing, the peak current through one proton-implanted sample was higher than that before implantation.

Inspec keywords: recovery; annealing; ion implantation; resonant tunnelling diodes

Other keywords: recovery; I-V characteristics; proton implantation; annealing; double-barrier diodes; vertical monolithic-integration

Subjects: Annealing processes in semiconductor technology; Semiconductor doping; Junction and barrier diodes

References

    1. 1)
      • H. Sheng , S.J. Chua . Properties of monolithic integration of a resonant tunnelling diode anda quantum well laser. Superlattices Monostruct. , 2 , 157 - 160
    2. 2)
      • T.S. Moise , Y-C Kao , A.C. Seabaugh , A.H. Taddiken . Integration of resonant-tunnelling transistors and hot-electron transistors. IEEE Electron. Device Lett. , 7 , 254 - 256
    3. 3)
      • K.J. Chen , T. Akeyoshi , K. Maezawa . Monolithic integration of resonant tunnelling diodes and FETs for monostable-bistabletransition logic elements (MOBILESs). IEEE Electron. Device Lett. , 2 , 70 - 73
    4. 4)
      • J.F. Zeigler , J.P. Biersack . (1985) TRIM95.05: The stopping and range of ions in solids.
    5. 5)
      • T. Henderson , W. Liu , T.S. Kim . Current conduction in an implant isolated GaAs/AlGaAs heterostructure. J. Appl. Phys. , 11 , 6571 - 6575
    6. 6)
      • E.R. Brown , J.R. Soderstrom , C.D. Parker , L.J. Mahoney , K.M. Molvar , T.C. McGill . Oscillations up to 712 GHz in InAs/AlSb resonant tunnelling diodes. Appl. Phys. Lett. , 2291 - 2293
    7. 7)
      • S. Javalagi , V. Reddy , K. Gallapalli , D. Neikirk . High efficiency microwave diode oscillators. Electron. Lett. , 1699 - 1701
    8. 8)
      • K. Billen , M.J. Kelly , S.V. Hutchinson , M. Henini , G. Hill . Proton implantation of Al0.4Ga0.6As/GaAs resonant-tunnellingdiode structures.
    9. 9)
      • J.H. Smet , T.P.E. Broekaert , C.G. Fonstad . Peak-to-valley current ratios as high as 50:1 at room temperature inpseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunnellingdiodes. J. Appl. Phys. , 5 , 2475 - 2477
    10. 10)
      • S.J. Pearton . Ion implantation for isolation of III-V semiconductors. Mater. Sci. Rep. , 313 - 367
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