ZnSe-based DBR-laser diode
ZnSe-based DBR-laser diode
- Author(s): G. Bacher ; N. Mais ; M. Illing ; A. Forchel ; K. Schüll ; J. Nürnberger ; G. Landwehr
- DOI: 10.1049/el:19951496
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- Author(s): G. Bacher 1 ; N. Mais 1 ; M. Illing 1 ; A. Forchel 1 ; K. Schüll 2 ; J. Nürnberger 2 ; G. Landwehr 2
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View affiliations
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Affiliations:
1: Technische Physik, Universität Würzburg, Würzburg, Germany
2: Experimentelle Physik III, Universität Würzburg, Würzburg, Germany
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Affiliations:
1: Technische Physik, Universität Würzburg, Würzburg, Germany
- Source:
Volume 31, Issue 25,
7 December 1995,
p.
2184 – 2185
DOI: 10.1049/el:19951496 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors present for the first time DBR-emission in an electrically pumped CdZnSe/ZnSSe/MgZnSSe laser at room temperature. Longitudinal single mode emission is observed. By changing the period of the Bragg reflector, the emission peak can be tuned over >40 meV. The threshold current strongly depends on the reflector period with a minimum value of ~160 mA.
Inspec keywords: laser modes; semiconductor lasers; distributed Bragg reflector lasers; zinc compounds; II-VI semiconductors; laser tuning
Other keywords:
Subjects: Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors
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