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Locally one-dimensional approach to diffusion process simulation in nonplanar domains

Locally one-dimensional approach to diffusion process simulation in nonplanar domains

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A new approach to diffusion process simulation in 2-D domains with nonplanar and moving boundaries, which combines the orthogonal numerical co-ordinate transformation associated with the alternative direction implicit (ADI), solving procedure and geometric splitting of the impurity diffusion equation into locally one-dimensional problems, is proposed.

Inspec keywords: semiconductor doping; diffusion; semiconductor process modelling

Other keywords: moving boundaries; orthogonal numerical co-ordinate transformation; alternative direction implicit solving procedure; locally one-dimensional approach; diffusion process simulation; geometric splitting; nonplanar domains; impurity diffusion equation

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Semiconductor doping

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